ENHANCEMENT OF OPEN CIRCUIT VOLTAGE IN HIGH-EFFICIENCY AMORPHOUS-SILICON ALLOY SOLAR-CELLS

[1] PHYSICS OF AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 997 - 1020

[2] HAMAKAWA Y, 1983, J NONCRYST SOLIDS, V58, P1265

[3] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308

[4] MULLER G, 1982, 6TH P IEEE PHOT C SA, P1129

[5] NAKAMURA G, 1984, 1ST P INT PHOT SCI E, P587

[6] OVSHINSKY SR, 1984, 1ST INT PHOT SCI ENG, P577

[7] Tsu R., 1980, Journal of the Physical Society of Japan, V49, P1249

[8] NUCLEATION AND GROWTH OF N-TYPE AND P-TYPE MICROCRYSTALS IN LOW-TEMPERATURE GLOW-DISCHARGE DEPOSITED SILICON FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 31 - 37

[1] PHYSICS OF AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 997 - 1020

[2] HAMAKAWA Y, 1983, J NONCRYST SOLIDS, V58, P1265

[3] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308

[4] MULLER G, 1982, 6TH P IEEE PHOT C SA, P1129

[5] NAKAMURA G, 1984, 1ST P INT PHOT SCI E, P587

[6] OVSHINSKY SR, 1984, 1ST INT PHOT SCI ENG, P577

[7] Tsu R., 1980, Journal of the Physical Society of Japan, V49, P1249

[8] NUCLEATION AND GROWTH OF N-TYPE AND P-TYPE MICROCRYSTALS IN LOW-TEMPERATURE GLOW-DISCHARGE DEPOSITED SILICON FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 31 - 37