NUCLEATION AND GROWTH OF N-TYPE AND P-TYPE MICROCRYSTALS IN LOW-TEMPERATURE GLOW-DISCHARGE DEPOSITED SILICON FILMS

被引：7

作者：

VANIER, PE

TAFTO, J

RAJESWARAN, G

KAMPAS, FJ

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 66卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(84)90294-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：31 / 37

页数：7

共 9 条

[1] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J].

HAMASAKI, T ;

KURATA, H ;

HIROSE, M ;

OSAKA, Y .

APPLIED PHYSICS LETTERS, 1980, 37 (12) :1084-1086

[2] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J].

IQBAL, Z ;

WEBB, AP ;

VEPREK, S .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :163-165

[3] DECOMPOSITION KINETICS OF A STATIC DIRECT-CURRENT SILANE GLOW-DISCHARGE [J].

LONGEWAY, PA ;

ESTES, RD ;

WEAKLIEM, HA .

JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (01) :73-77

[4] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J].

MATSUDA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :767-774

[5] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS [J].

MATSUDA, A ;

YAMASAKI, S ;

NAKAGAWA, K ;

OKUSHI, H ;

TANAKA, K ;

IIZIMA, S ;

MATSUMURA, M ;

YAMAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L305-L308

[6] RADICAL SPECIES IN ARGON-SILANE DISCHARGES [J].

ROBERTSON, R ;

HILS, D ;

CHATHAM, H ;

GALLAGHER, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :544-546

[7] GROWTH AND DEFECT CHEMISTRY OF AMORPHOUS HYDROGENATED SILICON [J].

SCOTT, BA ;

REIMER, JA ;

LONGEWAY, PA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6853-6863

[8] A THERMODYNAMIC CRITERION OF THE CRYSTALLINE-TO-AMORPHOUS TRANSITION IN SILICON [J].

VEPREK, S ;

IQBAL, Z ;

SAROTT, FA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (01) :137-145

[9]

1983, J NONCRYST SOLIDS, V59, P767

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