CHANNEL SENSITIVITY TO GATE ROUGHNESS IN A SPLIT-GATE GAAS-ALGAAS HETEROSTRUCTURE

被引：39

作者：

KUMAR, A ^{[1
]}

LAUX, SE ^{[1
]}

STERN, F ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 13期

关键词：

D O I：

10.1063/1.100736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1270 / 1271

页数：2

共 8 条

[1] ELECTRONIC STATES IN NARROW SEMICONDUCTING WIRES NEAR THRESHOLD [J].

DAVIES, JH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) :995-1009

[2] POLYNOMIAL PRECONDITIONERS FOR CONJUGATE-GRADIENT CALCULATIONS [J].

JOHNSON, OG ;

MICCHELLI, CA ;

PAUL, G .

SIAM JOURNAL ON NUMERICAL ANALYSIS, 1983, 20 (02) :362-376

[3] QUASI-ONE-DIMENSIONAL ELECTRON-STATES IN A SPLIT-GATE GAAS/ALGAAS HETEROSTRUCTURE [J].

LAUX, SE ;

FRANK, DJ ;

STERN, F .

SURFACE SCIENCE, 1988, 196 (1-3) :101-106

[4] ELECTRON-STATES IN NARROW GATE-INDUCED CHANNELS IN SI [J].

LAUX, SE ;

STERN, F .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :91-93

[5] SPECTROSCOPY OF ONE-DIMENSIONAL SUBBANDS ON INSB [J].

MERKT, U ;

SIKORSKI, C ;

KOTTHAUS, JP .

SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (06) :679-684

[6]

MERKT U, IBM J RES DEV, V32

[7] ONE-DIMENSIONAL CONDUCTION IN THE 2D ELECTRON-GAS OF A GAAS-ALGAS HETEROJUNCTION [J].

THORNTON, TJ ;

PEPPER, M ;

AHMED, H ;

ANDREWS, D ;

DAVIES, GJ .

PHYSICAL REVIEW LETTERS, 1986, 56 (11) :1198-1201

[8] GATE-CONTROLLED TRANSPORT IN NARROW GAAS/ALXGA1-XAS HETEROSTRUCTURES [J].

ZHENG, HZ ;

WEI, HP ;

TSUI, DC ;

WEIMANN, G .

PHYSICAL REVIEW B, 1986, 34 (08) :5635-5638

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