CHEMICALLY MODIFIED FIELD-EFFECT TRANSISTORS - A SODIUM-ION SELECTIVE SENSOR BASED ON CALIX[4]ARENE RECEPTOR MOLECULES

被引:86
作者
BRUNINK, JAJ
HAAK, JR
BOMER, JG
REINHOUDT, DN
MCKERVEY, MA
HARRIS, SJ
机构
[1] TWENTE UNIV TECHNOL,MESA RES INST,7500 AE ENSCHEDE,NETHERLANDS
[2] QUEENS UNIV BELFAST,DEPT CHEM,BELFAST BT7 1NN,ANTRIM,NORTH IRELAND
[3] LOCTITE IRELAND LTD,RES & DEV,DUBLIN 24,IRELAND
关键词
POTENTIOMETRY; ION-SENSITIVE FIELD-EFFECT TRANSISTOR; SODIUM;
D O I
10.1016/0003-2670(91)90011-S
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The development of an ion-sensitive field-effect transistor for sodium ions is described. Calix[4]arene derivatives incorporated in a poly(vinyl chloride)-based membrane provide the selectivity. A poly(2-hydroxyethyl methacrylate) interlayer between the silicon dioxide gate and the sensing membrane is necessary to obtain a Na+-sensitive ISFET with Nernstian behaviour. The potentiometric selectivity coefficients (log K(i,j)pot) for Na+ over K+ and Li+ are -1.9 and -2.5, respectively.
引用
收藏
页码:75 / 80
页数:6
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