FORMATION OF RELAXED SI1-XGEX LAYERS ON SIMOX BY HIGH-DOSE GE-74 ION-IMPLANTATION

被引：5

作者：

HOLLANDER, B

MANTL, S

MICHELSEN, W

MESTERS, S

机构：

[1] Inst. für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-5170 Jülich

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90680-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High dose Ge-74 ion implantation into the Si surface layer of SIMOX structures has been employed to form strain-relieved Si1-xGex layers on buried, amorphous SiO2. The samples were investigated by Rutherford backscattering spectrometry, He+ ion channeling and transmission electron microscopy. Ion implantation with an energy of 100 keV and a dose of 3 x 10(17) cm-2 at elevated substrate temperatures followed by rapid thermal annealing at 1290-degrees-C resulted in a single crystalline Si0.74Ge0.26 layer with a thickness of 1700 angstrom. The Ge concentration x of the newly formed Si1-xGex layer can be chosen by using an appropriate implantation dose. Strain measurements by ion channeling confirmed complete strain relaxation of the Si1-xGex layer after annealing.

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页码：777 / 780

页数：4

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