EPITAXIAL-GROWTH OF CUALSE2 ON CUGASE2 SUBSTRATES

被引：19

作者：

SUGIYAMA, K

MORI, K

MIYAKE, H

机构：

[1] Department of Electrical Engineering, Mie University, Tsu-shi, Mie, 514, Kamihama-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 113卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(91)90072-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CuAlSe2 epitaxial layers have been grown on CuGaSe2 substrates by a closed-tube iodine chemical vapor transport technique. The flat and smooth epitaxial layers were obtained by using low concentrations of iodine, and their optical properties were examined.

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收藏

页码：390 / 394

页数：5

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