FORMATION OF A CU-AL-SE PHASE WITH A LONG-RANGE ORDER BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

MORITA, Y

NARUSAWA, T

机构：

[1] Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co Ltd., Moriguchi, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期

关键词：

Chalcopyrite structure; Cu-AI-Se system; Long-range order; Molecular beam epitaxy; New phase;

D O I：

10.1143/JJAP.29.L1379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new phase in the Cu-Al-Se system was found on GaP substrates under growth conditions of an excess Cu vapour pressure and a growth temperature of 1073 K by use of molecular beam epitaxy. The mean composition of this film is close to the formula Cu3AlSe5, and differs considerably from the chalcopyrite structure compound CuAlSe2. We provide the first evidence of the presence of a new Cu-Al-Se phase with a long-range order. © 1990 IOP Publishing Ltd.

引用

页码：L1379 / L1381

页数：3

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