MEASUREMENT OF FRACTURE-STRESS, YOUNG MODULUS, AND INTRINSIC STRESS OF HEAVILY BORON-DOPED SILICON MICROSTRUCTURES

被引:38
作者
NAJAFI, K
SUZUKI, K
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关键词
D O I
10.1016/0040-6090(89)90492-6
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:251 / 258
页数:8
相关论文
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