INFLUENCE OF ACRT ON INTERFACE STABILITY AND PARTICLE TRAPPING BEHAVIOR IN DIRECTIONAL SOLIDIFICATION OF SILICON

被引：15

作者：

RAVISHANKAR, PS ^{[1
]}

DISMUKES, JP ^{[1
]}

WILCOX, WR ^{[1
]}

机构：

[1] CLARKSON UNIV,POTSDAM,NY 13676

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 71卷 / 03期

关键词：

D O I：

10.1016/0022-0248(85)90364-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：579 / 586

页数：8

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