THE PROBLEM OF A NEAR-SURFACE QUASI-GAS TRANSITION LAYER IN MBE

被引：10

作者：

HERMAN, MA

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 11期

关键词：

D O I：

10.1002/crat.2170211108

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1413 / 1420

页数：8

共 36 条

[1] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&

[2] TRANSITION LAYER IN LATTICE-GAS MODEL OF A SOLID-MELT INTERFACE [J].

CAHN, JW ;

KIKUCHI, R .

PHYSICAL REVIEW B, 1985, 31 (07) :4300-4304

[3] A CRITICAL COMPARISON OF MOCVD AND MBE FOR HETEROJUNCTION DEVICES [J].

DAPKUS, PD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :345-355

[4] EPITAXY AND THICK-FILM FORMATION ON AN ATTRACTIVE SUBSTRATE - THE SYSTEMATICS OF A LATTICE-GAS MODEL [J].

EBNER, C ;

ROTTMAN, C ;

WORTIS, M .

PHYSICAL REVIEW B, 1983, 28 (08) :4186-4197

[5] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

[6] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1975, 50 (02) :434-450

[7] EVALUATION OF SURFACE KINETIC DATA BY TRANSFORM ANALYSIS OF MODULATED MOLECULAR-BEAM MEASUREMENTS [J].

FOXON, CT ;

BOUDRY, MR ;

JOYCE, BA .

SURFACE SCIENCE, 1974, 44 (01) :69-92

[8] VIBRATIONAL-EXCITATION, HARPOONING, AND STICKING IN MOLECULE SURFACE COLLISIONS [J].

GADZUK, JW ;

NORSKOV, JK .

JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (06) :2828-2838

[9] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J].

GHAISAS, SV ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :540-546

[10]

Herman M. A., 1983, Optica Applicata, V13, P55

← 1 2 3 4 →