EFFECT OF PARAMETER VARIATIONS ON THE PERFORMANCE OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL ELECTROABSORPTION MODULATORS

被引：14

作者：

CHO, HS ^{[1
]}

PRUCNAL, PR ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08544 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 07期

关键词：

Aluminum Gallium Arsenide - Electroabsorption Modulators - Quantum Well Structures;

D O I：

10.1109/3.29312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1682 / 1690

页数：9

共 30 条

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[7] ELECTRIC-FIELD DEPENDENCE OF THE BINDING-ENERGY OF SHALLOW DONORS IN GAAS-GA1-CHI-AL-CHI-AS QUANTUM WELLS
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[9] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 265 - 275
[10] ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES
CHEMLA, DS
DAMEN, TC
MILLER, DAB
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 864 - 866

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