OBSERVATION OF ALGAAS/GAAS MULTIQUANTUM WELL STRUCTURE BY SCANNING TUNNELING MICROSCOPY

被引：21

作者：

GOMEZRODRIGUEZ, JM ^{[1
]}

BARO, AM ^{[1
]}

SILVEIRA, JP ^{[1
]}

VAZQUEZ, M ^{[1
]}

GONZALEZ, Y ^{[1
]}

BRIONES, F ^{[1
]}

机构：

[1] CSIC,CTR NACL MICROELECTR,E-28006 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have imaged an AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy (STM). In order to localize the structure the STM is integrated in a conventional scanning electron microscope. The observed surface structure has a periodicity of ≊180 Å and shows an apparent corrugation of ≊10 Å in the constant current mode. We discuss the possible mechanisms of the observed contrast, which we tentatively attribute to the different electrical properties of the two different layers.

引用

页码：36 / 38

页数：3