EXCITON EFFECTS ON LUMINESCENCE OF UNDOPED ACTIVE LAYERS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE CRYSTALS AT TEMPERATURES BETWEEN 77 AND 300 K

被引：4

作者：

NAKASHIMA, H ^{[1
]}

CHINONE, N ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.322004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3092 / 3095

页数：4

共 17 条

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[10] OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF THIN GAAS LAYERS IN GAAS-AL CHI GA1-CHI AS DOUBLE HETEROSTRUCTURES [J].

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