THERMIONIC-EMISSION DIFFUSION-MODEL OF CURRENT CONDUCTION IN POLYCRYSTALLINE SILICON

被引:6
作者
SINGH, SN
KISHORE, R
SINGH, PK
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D O I
10.1109/T-ED.1985.22061
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:998 / 1000
页数:3
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共 11 条
[1]   TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].
BACCARANI, G ;
RICCO, B ;
SPADINI, G .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570
[2]   GRAIN-SIZE AND RESISTIVITY OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].
COLINGE, JP ;
DEMOULIN, E ;
DELANNAY, F ;
LOBET, M ;
TEMERSON, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2009-2014
[3]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[4]   LOW-COST SOLAR-CELLS BASED ON LARGE-AREA UNCONVENTIONAL SILICON [J].
FISCHER, H ;
PSCHUNDER, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :438-442
[5]  
KUMAR KR, 1981, APPL PHYS LETT, V39, P898, DOI 10.1063/1.92599
[6]  
LEAMY HJ, 1981, GRAIN BOUNDARIES SEM
[7]   MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].
LU, NCC ;
GERZBERG, L ;
LU, CY ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830
[8]   THE HALL-EFFECT IN POLYCRYSTALLINE AND POWDERED SEMICONDUCTORS [J].
ORTON, JW ;
POWELL, MJ .
REPORTS ON PROGRESS IN PHYSICS, 1980, 43 (11) :1263-1307
[9]  
PEISL M, 1983, IEEE T ELECTRON DEVI, V30, P1791
[10]   ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].
SETO, JYW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254