GROWTH OF VANADIUM ON SILICON SUBSTRATES

[1] [Anonymous], 1957, RECTIFYING SEMICONDU

[2] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[3] CASEY J, 1963, APR EL SOC PITTSB M

[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[5] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[6] CROWELL CR, 1965, AIME T, V233, P478

[7] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[8] METAL-GATE TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1751 - &

[9] MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[10] PROPERTIES OF VANADIUM TETRACHLORIDE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1945, 67 (01) : 75 - 77

[1] [Anonymous], 1957, RECTIFYING SEMICONDU

[2] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[3] CASEY J, 1963, APR EL SOC PITTSB M

[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[5] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[6] CROWELL CR, 1965, AIME T, V233, P478

[7] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[8] METAL-GATE TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1751 - &

[9] MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[10] PROPERTIES OF VANADIUM TETRACHLORIDE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1945, 67 (01) : 75 - 77