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GROWTH OF VANADIUM ON SILICON SUBSTRATES
被引:10
作者
:
MILLER, KJ
论文数:
0
引用数:
0
h-index:
0
MILLER, KJ
GRIECO, MJ
论文数:
0
引用数:
0
h-index:
0
GRIECO, MJ
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1966年
/ 113卷
/ 09期
关键词
:
D O I
:
10.1149/1.2424152
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:902 / &
相关论文
共 13 条
[1]
[Anonymous], 1957, RECTIFYING SEMICONDU
[2]
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[3]
CASEY J, 1963, APR EL SOC PITTSB M
[4]
SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
论文数:
0
引用数:
0
h-index:
0
COWLEY, AM
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
: 3212
-
&
[5]
RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(04)
: 395
-
&
[6]
CROWELL CR, 1965, AIME T, V233, P478
[7]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
: 329
-
&
[8]
METAL-GATE TRANSISTOR
LINDMAYER, J
论文数:
0
引用数:
0
h-index:
0
LINDMAYER, J
[J].
PROCEEDINGS OF THE IEEE,
1964,
52
(12)
: 1751
-
&
[9]
MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540
[10]
PROPERTIES OF VANADIUM TETRACHLORIDE
SIMONS, JH
论文数:
0
引用数:
0
h-index:
0
SIMONS, JH
POWELL, MG
论文数:
0
引用数:
0
h-index:
0
POWELL, MG
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1945,
67
(01)
: 75
-
77
←
1
2
→
共 13 条
[1]
[Anonymous], 1957, RECTIFYING SEMICONDU
[2]
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[3]
CASEY J, 1963, APR EL SOC PITTSB M
[4]
SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
论文数:
0
引用数:
0
h-index:
0
COWLEY, AM
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
: 3212
-
&
[5]
RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(04)
: 395
-
&
[6]
CROWELL CR, 1965, AIME T, V233, P478
[7]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
: 329
-
&
[8]
METAL-GATE TRANSISTOR
LINDMAYER, J
论文数:
0
引用数:
0
h-index:
0
LINDMAYER, J
[J].
PROCEEDINGS OF THE IEEE,
1964,
52
(12)
: 1751
-
&
[9]
MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540
[10]
PROPERTIES OF VANADIUM TETRACHLORIDE
SIMONS, JH
论文数:
0
引用数:
0
h-index:
0
SIMONS, JH
POWELL, MG
论文数:
0
引用数:
0
h-index:
0
POWELL, MG
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1945,
67
(01)
: 75
-
77
←
1
2
→