THEORETICAL ANALYSES OF ANGULAR-DEPENDENT PHOTOEMISSION FROM GAAS

被引：8

作者：

ROGERS, DL ^{[1
]}

FONG, CY ^{[1
]}

机构：

[1] UNIV CALIF,DEPT PHYS,DAVIS,CA 95616

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 34卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.34.660

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：660 / 663

页数：4

共 10 条

[1] ELECTRONIC-STRUCTURE OF GAAS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW LETTERS, 1974, 32 (12) :674-677

[2] LEED, AUGER, AND WORK FUNCTION STUDIES OF CLEAN AND NA-COVERED SURFACES OF GAAS [J].

CHEN, JM .

SURFACE SCIENCE, 1971, 25 (02) :305-&

[3] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[4] IMPLICATIONS OF CRYSTAL MOMENTUM CONSERVATION IN PHOTOELECTRIC EMISSION FOR BAND-STRUCTURE MEASUREMENTS [J].

KANE, EO .

PHYSICAL REVIEW LETTERS, 1964, 12 (04) :97-&

[5]

MAHEN GD, 1970, PHYS REV B, V11, P4334

[6] MEASUREMENT OF ANGLE OF DANGLING-BOND PHOTOEMISSION FROM CLEAVED SILICON [J].

ROWE, JE ;

TRAUM, MM ;

SMITH, NV .

PHYSICAL REVIEW LETTERS, 1974, 33 (22) :1333-1335

[7] PSEUDOPOTENTIAL CALCULATION OF EPSILON2 FROM ZINCBLENDE STRUCTURE - GAAS [J].

SASLOW, W ;

BERGSTRE.TK ;

FONG, CY ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1967, 5 (08) :667-&

[8] ANGULAR DEPENDENCE OF PHOTOEMISSION FROM (110) FACE OF GAAS [J].

SMITH, NV ;

TRAUM, MM .

PHYSICAL REVIEW LETTERS, 1973, 31 (20) :1247-1250

[9]

SMITH NV, PRIVATE COMMUNICATIO

[10] ANGULAR-DEPENDENCE OF PHOTOEMISSION AND ATOMIC ORBITALS IN LAYER COMPOUND 1T-TASE2 [J].

TRAUM, MM ;

SMITH, NV ;

DISALVO, FJ .

PHYSICAL REVIEW LETTERS, 1974, 32 (22) :1241-1244

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