BLISTER FORMATION IN PD GATE MIS HYDROGEN SENSORS

被引:60
作者
ARMGARTH, M
NYLANDER, C
机构
来源
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期
关键词
D O I
10.1109/EDL.1982.25608
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:384 / 386
页数:3
相关论文
共 15 条
  • [1] A STABLE HYDROGEN-SENSITIVE PD GATE METAL-OXIDE SEMICONDUCTOR CAPACITOR
    ARMGARTH, M
    NYLANDER, C
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 91 - 92
  • [2] ARMGARTH M, 1982, 4TH P WORLD HYDR EN
  • [3] DANNETUN HM, COMMUNICATION
  • [4] DOBOS K, COMMUNICATION
  • [5] Lewis F. A., 1967, PALLADIUM HYDROGEN S
  • [6] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR
    LUNDSTROEM, I
    SHIVARAMAN, S
    SVENSSON, C
    LUNDKVIST, L
    [J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 55 - 57
  • [7] HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS
    LUNDSTROM, I
    [J]. SENSORS AND ACTUATORS, 1981, 1 (04): : 403 - 426
  • [8] HYDROGEN SENSITIVE MOS-STRUCTURES .2. CHARACTERIZATION
    LUNDSTROM, I
    SODERBERG, D
    [J]. SENSORS AND ACTUATORS, 1981, 2 (02): : 105 - 138
  • [9] LUNDSTROM I, 1977, SURF SCI, V64, P497, DOI 10.1016/0039-6028(77)90059-0
  • [10] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR
    LUNDSTROM, KI
    SHIVARAMAN, MS
    SVENSSON, CM
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3876 - 3881