MOLECULAR-BEAM EPITAXY OF INSB FILMS ON CDTE

被引：23

作者：

SUGIYAMA, K

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(82)90125-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：450 / 452

页数：3

共 9 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001)
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[2] MINIMUM AL0.5GA0.5AS-GAAS HETEROJUNCTION WIDTH DETERMINED BY SPUTTER-AUGER TECHNIQUES
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EDWOOD, PD
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[3] X-RAY STUDY OF ALXGA1-XAS EPITAXIAL LAYERS
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MATSUI, J
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 255 - 262
[4] FORMATION OF HETEROJUNCTIONS CDTE-INSB
LEFLOCH, G
[J]. THIN SOLID FILMS, 1968, 2 (5-6) : 383 - &
[5] NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2, P77
[6] RHEED STUDY OF INSB FILMS GROWN BY MOLECULAR-BEAM EPITAXY
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ANDO, S
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L417 - L420
[7] CDTE-INSB HETEROJUNCTIONS - AN INVESTIGATION BY ELECTRICAL MEASUREMENTS AND BY SECONDARY ION MASS-SPECTROMETRY
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SIFFERT, P
WALD, FV
BELL, RO
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (01): : 237 - 242
[8] SUGIYAMA K, 1982, JPN J APPL PHYS 1, V21, P807, DOI 10.1143/JJAP.21.807
[9] MOLECULAR-BEAM EPITAXY OF IN-DOPED CDTE
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (04): : 665 - 666