TEMPERATURE AND STRESS DEPENDENCE OF ELECTRON LIFETIME IN RHO-TYPE SEMICONDUCTORS BETWEEN 1.5 AND 4.2 DEGREES K

被引：7

作者：

OTSUKA, E

MURASE, K

OHYAMA, T

机构：

来源：

PHYSICAL REVIEW LETTERS | 1966年 / 17卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.17.1007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：1007 / &

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