CRYSTAL-GROWTH OF GASB UNDER MICROGRAVITY CONDITIONS

[1] BULMAN WE, 1979, NTIS ORMLRMIC14 PROD

[2] DAHEVSKLY MA, 1969, SOVIET INORG MATER, V5, P1141

[3] Goldstain J.I., 1975, PRACTICAL SCANNING E, P150

[4] GYURO I, UNPUB

[5] DIRECT SYNTHESIS AND CRYSTALLIZATION OF GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) : 234 - 238

[6] MICRON-SIZED FACETS IN PULLED GASB CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : 2509 - 2510

[7] LENDVAY E, UNPUB J CRYSTAL GROW

[8] IMPROVED DEPTH RESOLUTION OF CHANNELING MEASUREMENTS IN RUTHERFORD BACKSCATTERING BY A DETECTOR TILT [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 235 - 237

[9] MEZEY G, 1976, ION BEAM SURFACE LAY, V1, P303

[10] CRYSTAL-GROWTH AND STEADY-STATE SEGREGATION UNDER ZERO GRAVITY - INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (02) : 276 - 283

[1] BULMAN WE, 1979, NTIS ORMLRMIC14 PROD

[2] DAHEVSKLY MA, 1969, SOVIET INORG MATER, V5, P1141

[3] Goldstain J.I., 1975, PRACTICAL SCANNING E, P150

[4] GYURO I, UNPUB

[5] DIRECT SYNTHESIS AND CRYSTALLIZATION OF GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) : 234 - 238

[6] MICRON-SIZED FACETS IN PULLED GASB CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : 2509 - 2510

[7] LENDVAY E, UNPUB J CRYSTAL GROW

[8] IMPROVED DEPTH RESOLUTION OF CHANNELING MEASUREMENTS IN RUTHERFORD BACKSCATTERING BY A DETECTOR TILT [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 235 - 237

[9] MEZEY G, 1976, ION BEAM SURFACE LAY, V1, P303

[10] CRYSTAL-GROWTH AND STEADY-STATE SEGREGATION UNDER ZERO GRAVITY - INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (02) : 276 - 283