HIGH-EFFICIENCY KU-BAND HBT MMIC POWER-AMPLIFIER

被引：4

作者：

BARTUSIAK, PJ

HENDERSON, T

KIM, T

BAYRAKTAROGLU, B

机构：

[1] Texas Instruments Incorporated, Dallas, TX

[2] College of Engineering, North Carolina State University, Raleigh, NC

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 11期

关键词：

D O I：

10.1109/55.192847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ku-band monolithic HBT power amplifier was developed using a MOCVD-grown AlGaAs / GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5-V collector bias, the amplifier produced 0.5-W CW output power with 5.0-dB gain and 42% power-added efficiency in the 15-16-GHz band. When operated at a single frequency (15 GHz), 0.66-W CW output power and 5.2 dB of gain was achieved with 43% PAE.

引用

页码：584 / 586

页数：3

共 8 条

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