JUNCTION ELECTROLUMINESCENCE FROM MICROSCOPIC DIODE STRUCTURES IN CUINSE2, PREPARED BY ELECTRIC FIELD-ASSISTED DOPING

被引：15

作者：

CHERNYAK, L ^{[1
]}

JAKUBOWICZ, A ^{[1
]}

CAHEN, D ^{[1
]}

机构：

[1] IBM CORP, DIV RES, ZURICH LAB, CH-8803 RUSCHLIKON, SWITZERLAND

来源：

ADVANCED MATERIALS | 1995年 / 7卷 / 01期

关键词：

D O I：

10.1002/adma.19950070109

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Communication: Light emitting diodes where the efficiency of the junction electroluminescence has been improved over devices fabricated using thermal in-diffusion methods, is demonstrated for structures such as that shown in the figure, which is an electric-field-induced device. As E-field produced transistors are already available, combined monolithic LED/transistor structures produced using E-field-induced doping of semiconductors could be possible.

引用

页码：45 / 48

页数：4

共 19 条

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