INVERSE MAGNETORESISTANCE IN THE SIMPLE SPIN-VALVE SYSTEM FE1-XVX/AU/CO

被引：47

作者：

RENARD, JP

BRUNO, P

MEGY, R

BARTENLIAN, B

BEAUVILLAIN, P

CHAPPERT, C

DUPAS, C

KOLB, E

MULLOY, M

VEILLET, P

VELU, E

机构：

[1] Institut d'Electronique Fondamentale, CNRS URA 022, Université Paris-Sud

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.51.12821

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetoresistance (MR) measurements have been performed on Fe/Au/Co and Fe1-xVx/Au/Co trilayers with perpendicular orientation of the magnetization of the thin ferromagnetic layers. While the MR is larger for an antiparallel arrangement of the magnetizations than for a parallel one in Fe/Au/Co (the usual spin-valve-type MR), an inverse spin-valve effect is observed in Fe1-xVx/Au/Co. This inverse MR is attributed to an increase of the density of states at the Fermi level for majority-spin electrons when Fe is alloyed with V. © 1995 The American Physical Society.

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页码：12821 / 12824

页数：4

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