EFFECT OF SI-DELTA DOPING AND GROWTH TEMPERATURE ON THE I(V) CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/(ALGA)AS RESONANT-TUNNELING DEVICES

被引：4

作者：

HENINI, M ^{[1
]}

SAKAI, JW ^{[1
]}

BETON, PH ^{[1
]}

EAVES, L ^{[1
]}

MAIN, PC ^{[1
]}

HILL, G ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECT & ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(AlGa)As-GaAs-(AlGa)As double barrier resonant tunneling diodes with different delta-doping levels in the GaAs quantum well (QW) together with undoped control samples have been investigated. A new subthreshold peak in the I(V) characteristics is observed and assigned to resonant tunneling through the bound state of a shallow donor impurity in the QW. By comparing the I(V) characteristics for wafers grown at different temperatures between 480 and 630-degrees-C, the effects of Si segregation from contact layers into the well can be identified. This constitutes a new technique of assessment of donors which is sensitive to areal doping densities as low as 10(7) cm-2. The effect of low growth temperature (480-degrees-C) and delta doping on peak/valley ratios of the resonances on the I(V) characteristic is also assessed.

引用

页码：958 / 961

页数：4

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