HYDROGEN PASSIVATION AND REACTIVATION OF THERMAL DONORS IN SILICON

被引:12
作者
BOHNE, DI
WEBER, J
机构
[1] Max-Planck-Institut für Festkörperforschung, W-7000 Stuttgart 80
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 07期
关键词
D O I
10.1103/PhysRevB.47.4037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dissociation of individual thermal-donor-hydrogen (TD-H) complexes is studied by means of infrared absorption, capacitance-voltage profiling, and deep-level transient spectroscopy. Contrary to earlier reports we determine the following dissociation energies: E(D)(TD1-H) = 1.90 +/- 0.07 eV, E(D)(TD2-H)= 1.67 +/- 0.05 eV, and for a mixture of different TD complexes E(D)(SIGMATD-H) = 1.61 +/- 0.05 eV. Our results ask for different core structures for TD1 and TDn with n greater-than-or-equal-to 2.
引用
收藏
页码:4037 / 4040
页数:4
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