EXTRACTION OF FREE-CARRIER DENSITY AND MOBILITY FROM THE OPTICAL-TRANSMISSION DATA OF TIN-DOPED INDIUM OXIDE THIN-FILMS

被引:9
作者
RAUF, IA [1 ]
机构
[1] UNIV CAMBRIDGE,MP GRP,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
关键词
D O I
10.1016/0167-577X(95)00008-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A method for extracting the free electron density and mobility as well as the thickness of a semiconducting film from the optical transmission data is presented. The method is tested for tin-doped indium oxide thin films prepared with different thicknesses and different dopant concentrations. Thickness values extracted from this method agree very closely with those measured by interferometric method. Also, different samples prepared with the same dopant concentration exhibit similar carrier density but differ from those prepared with different dopant concentrations.
引用
收藏
页码:73 / 78
页数:6
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