A 16K E2PROM EMPLOYING NEW ARRAY ARCHITECTURE AND DESIGNED-IN RELIABILITY FEATURES

被引:23
作者
YARON, G [1 ]
PRASAD, SJ [1 ]
EBEL, MS [1 ]
LEONG, BMK [1 ]
机构
[1] NATL SEMICOND CORP,SANTA CLARA,CA 95051
关键词
D O I
10.1109/JSSC.1982.1051827
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:833 / 841
页数:9
相关论文
共 16 条
[1]   FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE [J].
FROHMANB.D .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :517-&
[2]   AN INTEGRATED METAL-NITRIDE-OXIDE-SILICON (MNOS) MEMORY [J].
FROHMANB.D .
PROCEEDINGS OF THE IEEE, 1969, 57 (06) :1190-&
[3]   AN 8K EEPROM USING THE SIMOS STORAGE CELL [J].
GIEBEL, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) :311-315
[4]   ELECTRICALLY ALTERABLE NON-VOLATILE MEMORY CELL USING A FLOATING-GATE STRUCTURE [J].
GUTERMAN, DC ;
RIMAWI, IH ;
CHIU, TL ;
HALVORSON, RD ;
MCELROY, DJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :498-508
[5]   DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J].
HARARI, E .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2478-2489
[6]  
IIJUKA H, 1976, IEEE T ELECTRON DEVI, V23, P379
[7]  
JOHNSON WS, 1980, ISSCC, P152
[8]  
MASUOKA F, 1981, IEDM21 PAP
[9]  
MIIDA T, 1981, IEDM23 PAP
[10]  
NISHI Y, 1981, APPLIED SOLID STAT S, V2, P121