ON THE MEASUREMENT OF DENSITIES OF STATES IN AMORPHOUS-SEMICONDUCTORS

[1] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14

[2] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350

[3] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

[4] MONROE R, 1983, PHIL MAG B, V47, P605

[5] MOTT NF, 1971, ELECTRONIC PROCESSES, P43

[6] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1421 - 1424

[7] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J]. ADVANCES IN PHYSICS, 1981, 30 (05) : 593 - 676

[8] A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (01) : 49 - 52

[1] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14

[2] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350

[3] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

[4] MONROE R, 1983, PHIL MAG B, V47, P605

[5] MOTT NF, 1971, ELECTRONIC PROCESSES, P43

[6] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1421 - 1424

[7] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J]. ADVANCES IN PHYSICS, 1981, 30 (05) : 593 - 676

[8] A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (01) : 49 - 52