GALLIUM ARSENIDE INJECTION LASER RADAR

被引：22

作者：

GOLDSTEIN, BS

DALRYMPLE, GF

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 02期

关键词：

D O I：

10.1109/PROC.1967.5437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：181 / +

页数：1

共 17 条

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[4] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].

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[5] TEMPERATURE EFFECTS IN COHERENT GAAS DIODES [J].

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[6]

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[7] X-BAND MODULATION OF GAAS LASERS [J].

GOLDSTEIN, BS ;

WEIGAND, RM .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02) :195-+

[8]

GOLDSTEIN BS, 1963, 319 MIT LINC LAB LEX

[9] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

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[10]

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