INTRINSIC STRAIN AT LATTICE-MATCHED GA0.47IN0.53AS/INP INTERFACES AS STUDIED WITH HIGH-RESOLUTION X-RAY-DIFFRACTION

被引：49

作者：

VANDENBERG, JM

PANISH, MB

TEMKIN, H

HAMM, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 20期

关键词：

D O I：

10.1063/1.100345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1920 / 1922

页数：3

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[5] HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF INGAAS(P)/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
VANDENBERG, JM
HAMM, RA
PANISH, MB
TEMKIN, H
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