PERFORMANCE OF PACKAGED NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER WITH MULTILONGITUDINAL MODE INPUT

被引：2

作者：

EVANKOW, JD ^{[1
]}

OLSSON, NA ^{[1
]}

KU, RT ^{[1
]}

机构：

[1] AT&T BELL LABS,READING,PA 19604

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1109/50.17749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：163 / 170

页数：8

相关论文

共 16 条

[1] HALL K, COMMUNICATION
[2] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS
HASS, G
SALZBERG, CD
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) : 181 - 187
[3] SWITCHING CHARACTERISTICS OF LASER DIODE SWITCH
IKEDA, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (02) : 157 - 164
[4] MEASUREMENT OF THE MODAL REFLECTIVITY OF AN ANTI-REFLECTION COATING ON A SUPERLUMINESCENT DIODE
KAMINOW, IP
EISENSTEIN, G
STULZ, LW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) : 493 - 495
[5] LASER-DIODE OPTICAL SWITCH MODULE
KATAOKA, H
IKEDA, M
[J]. ELECTRONICS LETTERS, 1984, 20 (11) : 438 - 439
[6] KATSUYUKI K, 1985, J APPL PHYS, V58, P88
[7] KOBAYASHI S, 1981, IEEE J QUANTUM ELECT, V17, P681, DOI 10.1109/JQE.1981.1071166
[8] KRESSEL H, 1977, SEMICONDUCTOR LASERS, P271
[9] OPTICAL-SYSTEM WITH 2 PACKAGED 1.5-MU-M SEMICONDUCTOR-LASER AMPLIFIER REPEATERS
MARSHALL, IW
OMAHONY, MJ
CONSTANTINE, PD
[J]. ELECTRONICS LETTERS, 1986, 22 (05) : 253 - 255
[10] Mukai T., 1982, IEEE T MICROW THEORY, V30, P1548