GALLIUM VACANCY AND EL-2 IN GAAS - REPLY

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[2] GALLIUM VACANCY AND EL-2 IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (11) : 1213 - 1213

[3] MITTONEAU A, 1979, SOLID STATE COMMUN, V30, P157

[4] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3643 - 3649

[5] PHOTOCAPACITANCE QUENCHING EFFECT FOR OXYGEN IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1978, 27 (04) : 431 - 434

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[2] GALLIUM VACANCY AND EL-2 IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (11) : 1213 - 1213

[3] MITTONEAU A, 1979, SOLID STATE COMMUN, V30, P157

[4] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3643 - 3649

[5] PHOTOCAPACITANCE QUENCHING EFFECT FOR OXYGEN IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1978, 27 (04) : 431 - 434