PHOTOCAPACITANCE QUENCHING EFFECT FOR OXYGEN IN GAAS

被引：110

作者：

VINCENT, G ^{[1
]}

BOIS, D ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON, PHYS MAT LAB, 20 AVE ALBERT EINSTEIN, F-69621 VILLEURBANNE, FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 04期

关键词：

D O I：

10.1016/0038-1098(78)90550-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：431 / 434

页数：4

相关论文

共 13 条

[1] BOIS D, 1977, J PHYS LETT-PARIS, V38, pL351, DOI 10.1051/jphyslet:019770038017035100
[2] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE
BOIS, D
PINARD, P
[J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177
[3] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS
HASEGAWA, F
MAJERFELD, A
[J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288
[4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[5] EXTRINSIC ELECTROABSORPTION IN HIGH-RESISTIVITY GAAS
JONATH, AD
VORONKOV, E
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1754 - 1766
[6] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION
KUKIMOTO, H
HENRY, CH
MERRITT, FR
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499
[7] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066
[8] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
LANG, DV
LOGAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639
[9] LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904
[10] Milnes A., 1973, DEEP IMPURITIES SEMI