RAMAN-SCATTERING STUDY OF ION-BOMBARDMENT INDUCED AMORPHIZATION OF SIC

被引：26

作者：

WRIGHT, RB ^{[1
]}

GRUEN, DM ^{[1
]}

机构：

[1] ARGONNE NATL LAB,DIV CHEM,ARGONNE,IL 60439

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1977年 / 33卷 / 03期

关键词：

D O I：

10.1080/00337577708233096

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：133 / 140

页数：8

共 32 条

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[3]

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JOSHI, MC .

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[8] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].

EVANS, DJ ;

USHIODA, S .

PHYSICAL REVIEW B, 1974, 9 (04) :1638-1645

[9] STRAIN INDUCED PHONON LINE BROADENING OBSERVED BY SURFACE REFLECTION RAMAN SCATTERING [J].

EVANS, DJ ;

USHIODA, S .

SOLID STATE COMMUNICATIONS, 1972, 11 (08) :1043-&

[10]

FAGAN EA, 1974, SILICON CARBIDE 1973, P542

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