CHEMICAL ETCHING OF GERMANIUM

被引:11
作者
GHANDHI, SK
AYERS, JE
机构
[1] Rensselaer Polytechnic Inst, Troy,, NY, USA, Rensselaer Polytechnic Inst, Troy, NY, USA
关键词
PHOTODETECTORS - Materials - SOLAR CELLS - Materials;
D O I
10.1149/1.2096207
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Epitaxial germanium is an important material for the fabrication of tandem solar cells and long wavelength photodetectors. The polishing of germanium substrates, prior to germanium epitaxy, is thus an important step. A series of etching experiments have been conducted to evaluate chemical etches for this approach. It is found that the most satisfactory surfaces are obtained with a 2-3 min treatment in HNO//3:CH//3COOH:H//2O in an 18:8:5 ratio by volume.
引用
收藏
页码:2053 / 2054
页数:2
相关论文
共 7 条
[1]   HILLOCKS, PITS, AND ETCH RATE IN GERMANIUM CRYSTALS [J].
BATTERMAN, BW .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1236-1241
[2]  
BIONDI FJ, 1958, TRANSISTOR TECHNOLOG, V1
[3]  
Kern W, 1978, THIN FILM PROCESSES
[4]   PEROXIDE ETCHING OF GERMANIUM [J].
PRIMAK, W ;
KAMPWIRT.R ;
DAYAL, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (01) :88-&
[5]   ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J].
REISMAN, A ;
ROHR, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1425-1428
[6]   CHEMICAL ETCHING OF GERMANIUM IN SYSTEM HF-H2O2-H2O [J].
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :285-&
[7]  
SCHWARTZ B, 1964, J ELCHEM SO, V111, P197