HIGH-EFFICIENCY OPERATION OF PHASE-ADJUSTED DFB LASER BY ASYMMETRIC STRUCTURE

被引:4
作者
KOTAI, Y
SODA, H
WAKAO, K
ISHIKAWA, H
YAMAKOSHI, S
IMAI, H
机构
[1] Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-01, Japan
关键词
SEMICONDUCTOR DIODES;
D O I
10.1049/el:19860314
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Differential efficiency has been increased by 50% in a phase-adjusted DFB laser by the introduction of an asymmetric structure. The problem of mode degeneracy in DFB lasers has been resolved without penalty on efficiency and output power.
引用
收藏
页码:462 / 463
页数:2
相关论文
共 9 条
[1]   1.54-MU-M PHASE-ADJUSTED INGAASP/INP DISTRIBUTED FEEDBACK LASERS WITH MASS-TRANSPORTED WINDOWS [J].
BROBERG, B ;
KOENTJORO, S ;
FURUYA, K ;
SUEMATSU, Y .
APPLIED PHYSICS LETTERS, 1985, 47 (01) :4-6
[2]   ANTISYMMETRIC TAPER OF DISTRIBUTED FEEDBACK LASERS [J].
HAUS, HA ;
SHANK, CV .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (09) :532-539
[3]   COUPLED-WAVE THEORY OF DISTRIBUTED FEEDBACK LASERS [J].
KOGELNIK, H ;
SHANK, CV .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2327-+
[4]   1.5-MU-M PHASE ADJUSTED ACTIVE DISTRIBUTED REFLECTOR LASER FOR COMPLETE DYNAMIC SINGLE-MODE OPERATION [J].
KOYAMA, F ;
SUEMATSU, Y ;
KOJIMA, K ;
FURUYA, K .
ELECTRONICS LETTERS, 1984, 20 (10) :391-393
[5]   GAINASP LNP PHASE-ADJUSTED DISTRIBUTED FEEDBACK LASERS WITH A STEP-LIKE NONUNIFORM STRIPE WIDTH STRUCTURE [J].
SODA, H ;
WAKAO, K ;
SUDO, H ;
TANAHASHI, T ;
IMAI, H .
ELECTRONICS LETTERS, 1984, 20 (24) :1016-1018
[6]   EFFECT OF EXTERNAL REFLECTORS ON LONGITUDINAL MODES OF DISTRIBUTED FEEDBACK LASERS [J].
STREIFER, W ;
BURNHAM, RD ;
SCIFRES, DR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (04) :154-161
[7]   PROPOSAL OF A DISTRIBUTED FEEDBACK LASER WITH NONUNIFORM STRIPE WIDTH FOR COMPLETE SINGLE-MODE OSCILLATION [J].
TADA, K ;
NAKANO, Y ;
USHIROKAWA, A .
ELECTRONICS LETTERS, 1984, 20 (02) :82-84
[8]   EFFECT OF MIRROR FACETS ON LASING CHARACTERISTICS OF DISTRIBUTED FEEDBACK INGAASP/INP LASER-DIODES AT 1.5 MU-M RANGE [J].
UTAKA, K ;
AKIBA, S ;
SAKAI, K ;
MATSUSHIMA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :236-245
[9]   LAMBDA/4-SHIFTED INGAASP INP DFB LASERS BY SIMULTANEOUS HOLOGRAPHIC EXPOSURE OF POSITIVE AND NEGATIVE PHOTORESISTS [J].
UTAKA, K ;
AKIBA, S ;
SAKAI, K ;
MATSUSHIMA, Y .
ELECTRONICS LETTERS, 1984, 20 (24) :1008-1010