THE THERMOPOWER OF 2D ELECTRON GASES IN ALXGA1-XAS/GAAS HETEROSTRUCTURES OVER A WIDE TEMPERATURE-RANGE

被引：7

作者：

CYCA, BR ^{[1
]}

FLETCHER, R ^{[1
]}

DIORIO, M ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1992年 / 4卷 / 18期

关键词：

D O I：

10.1088/0953-8984/4/18/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper presents our results on the thermopower of three heterojunction samples. The thermopower shows a peak in the region of 12 K followed by a rapid decrease at higher temperatures. These features are believed to be due to phonon drag. Above about 100 K, the thermopower becomes relatively constant. We assume that this region is controlled by diffusion effects. A numerical calculation of the diffusion thermopower shows that above 100 K the coefficient is approaching the classical limit and has only a weak variation with temperature.

引用

页码：4491 / 4498

页数：8

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