DIFFUSION THERMOPOWER OF A 2DEG

被引：28

作者：

KARAVOLAS, VC

BUTCHER, PN

机构：

[1] Dept. of Phys., Warwick Univ., Coventry

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 15期

关键词：

D O I：

10.1088/0953-8984/3/15/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the effect of the background impurity concentration N(BI) on the thermopower of a GaAs/AlGaAs heterojunction. A comparison between a GaAs/AlGaAs heterojunction and a Si MOSFET is also given. For the heterojunction we always find a negative sign for the thermopower, in contrast to the Si MOSFET for which the sign sometimes changes with increasing N(BI). This different behaviour is due to the difference of the confining potentials of the two systems.

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页码：2597 / 2602

页数：6

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