NARROW-BAND FREQUENCY CONTROL OF AN INJECTION-LOCKED DIODE-LASER BATTERY

被引：7

作者：

YU, J ^{[1
]}

GAGNE, MC ^{[1
]}

VALENTIN, C ^{[1
]}

YUAN, RL ^{[1
]}

PILLET, P ^{[1
]}

机构：

[1] UNIV PARIS 11,AIME COTTON LAB 2,CNRS,F-91405 ORSAY,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1992年 / 2卷 / 09期

关键词：

D O I：

10.1051/jp3:1992202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the generalization of the optical injection locking procedure to a battery of high power diode lasers. To illustrate the principle, two 50 mW cw single-mode GaAlAs multiple quantum well structure diode lasers have been injection-locked to a low power cw single-mode diode laser. In the presence of a large number of slave lasers, the isolation of the master one becomes more critical, but the injection conditions are not changed dramatically. A typical locking bandwidth of 3 GHz is obtained for an injection power of 20 muW. Significant locking is still observed for 0.5 muW injection. Injection-locked high power laser beams can be obtained with RF range frequency offsets by injection through acousto-optical modulators, offering a large number of potential applications.

引用

页码：1615 / 1622

页数：8

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