HIGH MOBILITY INP EPITAXIAL LAYERS PREPARED BY ATMOSPHERIC-PRESSURE MOVPE USING TRIMETHYLINDIUM DISSOCIATED FROM AN ADDUCT WITH 1,2-BIS(DIPHENYL PHOSPHINO)ETHANE

被引：40

作者：

MOORE, AH ^{[1
]}

SCOTT, MD ^{[1
]}

DAVIES, JI ^{[1
]}

BRADLEY, DC ^{[1
]}

FAKTOR, MM ^{[1
]}

CHUDZYNSKA, H ^{[1
]}

机构：

[1] UNIV LONDON QUEEN MARY COLL,LONDON E1 4NS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90275-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：19 / 22

页数：4

相关论文

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