METASTABLE OXYGEN-INDUCED ORDERED STRUCTURE ON THE SI(001) SURFACE

被引：13

作者：

MEN, FK

ERSKINE, JL

机构：

[1] Department of Physics, University of Texas at Austin, Austin

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.11200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an oxygen-induced metastable ordered structure on a Si(001) surface. The c(4X4) structure is obtained after extensive annealing of a clean Si(001)-2X1 surface dosed with oxygen at room temperature. This c(4X4) structure appears only after the completion of the 2X1 structure, which disappears in the early annealing stage. The c(4X4) structure reverts back irreversibly to the 2X1 structure after the surface is heated to above 720 degrees C. Possible structural models for the c(4X4) reconstruction are discussed.

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页码：11200 / 11203

页数：4

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