METASTABLE OXYGEN-INDUCED ORDERED STRUCTURE ON THE SI(001) SURFACE

被引：13

作者：

MEN, FK

ERSKINE, JL

机构：

[1] Department of Physics, University of Texas at Austin, Austin

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.11200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an oxygen-induced metastable ordered structure on a Si(001) surface. The c(4X4) structure is obtained after extensive annealing of a clean Si(001)-2X1 surface dosed with oxygen at room temperature. This c(4X4) structure appears only after the completion of the 2X1 structure, which disappears in the early annealing stage. The c(4X4) structure reverts back irreversibly to the 2X1 structure after the surface is heated to above 720 degrees C. Possible structural models for the c(4X4) reconstruction are discussed.

引用

收藏

页码：11200 / 11203

页数：4

相关论文

共 20 条

[11] SI-]SIO2 TRANSFORMATION - INTERFACIAL STRUCTURE AND MECHANISM [J].

OURMAZD, A ;

TAYLOR, DW ;

RENTSCHLER, JA ;

BEVK, J .

PHYSICAL REVIEW LETTERS, 1987, 59 (02) :213-216

[12] X-RAY-SCATTERING STUDIES OF THE SIO2/SI(001) INTERFACIAL STRUCTURE [J].

RABEDEAU, TA ;

TIDSWELL, IM ;

PERSHAN, PS ;

BEVK, J ;

FREER, BS .

APPLIED PHYSICS LETTERS, 1991, 59 (06) :706-708

[13] NATIVE OXIDATION OF THE SI(001) SURFACE - EVIDENCE FOR AN INTERFACIAL PHASE [J].

RENAUD, G ;

FUOSS, PH ;

OURMAZD, A ;

BEVK, J ;

FREER, BS ;

HAHN, PO .

APPLIED PHYSICS LETTERS, 1991, 58 (10) :1044-1046

[14]

TABATA T, 1987, SURF SCI, V179, pL63, DOI 10.1016/0039-6028(87)90114-2

[15] THE INITIAL-STAGES OF THE OXIDATION OF SI(100)2X1 STUDIED BY STM [J].

UDAGAWA, M ;

UMETANI, Y ;

TANAKA, H ;

ITOH, M ;

UCHIYAMA, T ;

WATANABE, Y ;

YOKOTSUKA, T ;

SUMITA, I .

ULTRAMICROSCOPY, 1992, 42 :946-951

[16] STRUCTURAL MODEL OF SI(100)-C(4X4) [J].

WANG, HC ;

LIN, RF ;

WANG, X .

PHYSICAL REVIEW B, 1987, 36 (14) :7712-7714

[17] STRUCTURE OF THE SI(100) SURFACE IN THE CLEAN (2X1), (2X1)-H MONOHYDRIDE, (1X1)-H DIHYDRIDE, AND C(4X4)-H PHASES [J].

WANG, Y ;

SHI, M ;

RABALAIS, JW .

PHYSICAL REVIEW B, 1993, 48 (03) :1678-1688

[18]

WANG Y, 1993, PHYS REV B, V48, P1689

[19] INITIAL OXIDATION OF MBE-GROWN SI(100) SURFACES [J].

YAGUCHI, H ;

FUJITA, K ;

FUKATSU, S ;

SHIRAKI, Y ;

ITO, R ;

IGARASHI, T ;

HATTORI, T .

SURFACE SCIENCE, 1992, 275 (03) :395-400

[20] THE CHEMISORPTION BEHAVIOR OF OXYGEN ON THE SI(100) SURFACE [J].

ZHENG, XM ;

SMITH, PV .

SURFACE SCIENCE, 1990, 232 (1-2) :6-16