NATIVE OXIDATION OF THE SI(001) SURFACE - EVIDENCE FOR AN INTERFACIAL PHASE

被引：53

作者：

RENAUD, G

FUOSS, PH

OURMAZD, A

BEVK, J

FREER, BS

HAHN, PO

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] WACKER CHEMITRON,W-8263 BURGHAUSEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 10期

关键词：

D O I：

10.1063/1.104418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used grazing incidence x-ray scattering techniques to investigate the structure of the Si-SiO2 interface, obtained by native oxidation of a Si(001) surface. The x-ray diffraction patterns reveal a twofold symmetric interfacial phase, of 2 X 1 periodicity. This interfacial phase, which is coherent with the silicon substrate, extends over very large lateral distances (up to 5000 angstrom) and is less than 5 angstrom thick. This phase is very disordered at the atomic scale. Its extent and perfection strongly depend on the flatness of the initial silicon substrate.

引用

页码：1044 / 1046

页数：3

共 12 条

[1] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING
CHEUNG, NW
FELDMAN, LC
SILVERMAN, PJ
STENSGAARD, I
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (11) : 859 - 861
[2] X-RAY-SCATTERING STUDIES OF THE SI-SIO2 INTERFACE
FUOSS, PH
NORTON, LJ
BRENNAN, S
FISCHERCOLBRIE, A
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (07) : 600 - 603
[3] FUOSS PH, 1984, NUCL INSTRUM METH A, V222, P164
[4] CORRELATION OF SURFACE-MORPHOLOGY AND CHEMICAL-STATE OF SI SURFACES TO ELECTRICAL-PROPERTIES
HAHN, PO
GRUNDNER, M
SCHNEGG, A
JACOB, H
[J]. APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 436 - 456
[5] ELECTRONIC-STRUCTURE OF DEFECTS AT SI-SIO2 INTERFACES
HERMAN, F
KASOWSKI, RV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 395 - 401
[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE
HIMPSEL, FJ
MCFEELY, FR
TALEBIBRAHIMI, A
YARMOFF, JA
HOLLINGER, G
[J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096
[7] THE STRUCTURAL MODELS OF THE SI/SIO2 INTERFACE
OHDOMARI, I
AKATSU, H
YAMAKOSHI, Y
KISHIMOTO, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 89 (1-2) : 239 - 248
[8] STUDY OF THE INTERFACIAL STRUCTURE BETWEEN SI(100) AND THERMALLY GROWN SIO2 USING A BALL-AND-SPOKE MODEL
OHDOMARI, I
AKATSU, H
YAMAKOSHI, Y
KISHIMOTO, K
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3751 - 3754
[9] EFFECT OF PROCESSING ON THE STRUCTURE OF THE SI/SIO2 INTERFACE
OURMAZD, A
RENTSCHLER, JA
BEVK, J
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (09) : 743 - 745
[10] RENAUD G, UNPUB

← 1 2 →