ELECTRONIC-STRUCTURE OF DEFECTS AT SI-SIO2 INTERFACES

被引：59

作者：

HERMAN, F ^{[1
]}

KASOWSKI, RV ^{[1
]}

机构：

[1] DUPONT CO,EXPTL STN,WILMINGTON,DE 19898

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：395 / 401

页数：7

共 47 条

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