INITIAL OXIDATION OF MBE-GROWN SI(100) SURFACES

被引：9

作者：

YAGUCHI, H

FUJITA, K

FUKATSU, S

SHIRAKI, Y

ITO, R

IGARASHI, T

HATTORI, T

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

[2] MUSASHI INST TECHNOL,DEPT ELECT & ELECTR ENGN,SETAGAYA KU,TOKYO 158,JAPAN

来源：

SURFACE SCIENCE | 1992年 / 275卷 / 03期

关键词：

D O I：

10.1016/0039-6028(92)90811-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the initial oxidation of MBE-grown Si(100) surfaces with atomic flatness using X-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 L at room temperature and that the oxygen coverage is saturated at 0.4 ML. At elevated temperatures, however, the surface oxidation was substantially promoted on the atomically flat surface. On the other hand, the oxidation was found to proceed on a deliberately corrugated Si surface prepared by a low temperature MBE growth, even at room temperature.

引用

页码：395 / 400

页数：6

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