GROWTH MODES OF MBE AND SPE IN THE HETEROEPITAXY OF A NISI2 LAYER ON SI(111) SUBSTRATE

被引：10

作者：

ISHIZAKA, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：883 / 891

页数：9

共 47 条

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