DEPARTURES FROM STOICHIOMETRY IN (100) SURFACES OF GAP, INDUCED BY BOMBARDMENT WITH 2 KV ELECTRONS

被引:4
作者
BAYLISS, CR [1 ]
KIRK, DL [1 ]
机构
[1] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
关键词
D O I
10.1016/0040-6090(75)90185-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:L35 / L38
页数:4
相关论文
共 4 条
[1]   COMBINED AUGER-ELECTRON SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY [J].
ASHWELL, GWB ;
TODD, CJ ;
HECKINGBOTTOM, R .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (05) :435-438
[2]  
CORBETT JW, 1966, ELECTRON RADIATION D
[3]  
GALLON TE, 1970, SURFACE SCIENCE, V21, P241
[4]  
WILLARDSON RK, 1962, COMPOUND SEMICONDUCT