AUGER RECOMBINATION + IMPACT IONIZATION INVOLVING TRAPS IN SEMICONDUCTORS

[11] KARPOVA IV, 1962, P INT C PHYS SEM EX, P880

[12] ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1668 - &

[13] AUGER EFFECT INVOLVING RECOMBINATION CENTRES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 83 (5322): : 325 - &

[14] LANDSBERG PT, 1964, INT C SEMICONDUCTORS

[15] NAGAE M, 1958, PROG THEOR PHYS, V19, P3

[16] POPOV YM, 1958, SOVIET PHYSICS JETP, V8, P348

[17] OPTICAL AND IMPACT RECOMBINATION IN IMPURITY PHOTOCONDUCTIVITY IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1757 - 1760

[18] WATSON GN, 1944, THEORY BESSEL FUNCTI, P236

[11] KARPOVA IV, 1962, P INT C PHYS SEM EX, P880

[12] ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1668 - &

[13] AUGER EFFECT INVOLVING RECOMBINATION CENTRES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 83 (5322): : 325 - &

[14] LANDSBERG PT, 1964, INT C SEMICONDUCTORS

[15] NAGAE M, 1958, PROG THEOR PHYS, V19, P3

[16] POPOV YM, 1958, SOVIET PHYSICS JETP, V8, P348

[17] OPTICAL AND IMPACT RECOMBINATION IN IMPURITY PHOTOCONDUCTIVITY IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1757 - 1760

[18] WATSON GN, 1944, THEORY BESSEL FUNCTI, P236