GAAS-GE HETEROJUNCTION INTERFACES - CYCLICAL BEHAVIOR OF BAND DISCONTINUITIES

被引：6

作者：

WALDROP, JR

GRANT, RW

KRAUT, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583541

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1060 / 1063

页数：4

相关论文

共 17 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] INEQUALITY OF SEMICONDUCTOR HETEROJUNCTION CONDUCTION-BAND-EDGE DISCONTINUITY AND ELECTRON-AFFINITY DIFFERENCE
BAUER, RS
ZURCHER, P
SANG, HW
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 663 - 665
[3] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM
BOBB, LC
HOLLOWAY, H
MAXWELL, KH
ZIMMERMAN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +
[4] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION
FRENSLEY, WR
KROEMER, H
[J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652
[5] HETEROJUNCTION BAND DISCONTINUITY GROWTH SEQUENCE VARIATION AT COMPOUND SEMICONDUCTOR-GERMANIUM (110) INTERFACES - POSSIBLE ROLE OF ANTIPHASE DISORDER
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
KRAUT, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1295 - 1299
[6] HETEROJUNCTION BAND DISCONTINUITIES FOR GAAS GROWN ON GE(110) - TIME-VARIATION
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
KRAUT, EA
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 498 - 506
[7] ELEMENTARY THEORY OF HETEROJUNCTIONS
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[8] THEORY OF BAND LINE-UPS
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1231 - 1238
[9] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY
KRAUT, EA
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1965 - 1977
[10] KUAN TS, 1983, J APPL PHYS, V54, P4413