共 27 条
- [2] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 491 - 497
- [3] GE-GAAS(110) INTERFACE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
- [7] XPS MEASUREMENTS OF ABRUPT GE-GAAS HETEROJUNCTION INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1451 - 1455
- [8] MEASUREMENT OF POTENTIAL AT SEMICONDUCTOR INTERFACES BY ELECTRON-SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 320 - 327
- [9] HETEROJUNCTION BAND DISCONTINUITY GROWTH SEQUENCE VARIATION AT COMPOUND SEMICONDUCTOR-GERMANIUM (110) INTERFACES - POSSIBLE ROLE OF ANTIPHASE DISORDER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1295 - 1299